Gallium arsenide phosphide top solar cell
US4582952A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1984 |
| Grant date | Apr 15, 1986 |
| Priority date | — |
| Expiry date | Apr 30, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
An improved tandem solar cell includes a gallium arsenide phosphide top solar cell and silicon bottom solar cell. The gallium arsenide phosphide solar cell is fabricated on a transparent gallium phosphide substrate and either placed in series with the silicon solar cell for a two terminal device or wired separately for a four terminal device. The top solar cell should have an energy gap between 1.77 and 2.09 eV for optimum energy conversion efficiency. A compositionally graded transition layer between the gallium phosphide substrate and the active semiconductor layers reduces dislocations in the active region. A gallium phosphide cap layer over the gallium arsenide phosphide solar cell reduces surface recombination losses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.