Intermetallic semiconductor ohmic contact
US4583110A · kind A · utility
43Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1984 |
| Grant date | Apr 15, 1986 |
| Priority date | — |
| Expiry date | Jun 14, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A 10.sup.-6 ohm cm.sup.2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5.times.10.sup.19 /cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level condition so that an enhanced surface donor concentration occurs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.