High rate, low temperature silicon deposition system
US4583492A · kind A · utility
19Cited by
8References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1983 |
| Grant date | Apr 22, 1986 |
| Priority date | — |
| Expiry date | Dec 19, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/507
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A radio frequency, plasma-enhanced, vapor deposition reactor has apparatus (3-7) for providing a flow of silane in an inert gas carrier, a deposition chamber (20) formed between a pair of flow restrictors (18, 27) and an RF coil (22) for providing inductive coupling of RF power (24) for plasma excitation, disposed downstream of a fixture (8) for holding the substrate upon which amorphous silicon is to be disposed. A baffle (30) provides diversion of the gas flow toward a gravity trap chamber (31), thereby collecting some particulates and prolonging the cycle time before plugging of the vacuum pump (7) can occur.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.