Process for preparing ZnSe single crystal
US4584053A · kind A · utility
7Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1984 |
| Grant date | Apr 22, 1986 |
| Priority date | — |
| Expiry date | Jun 22, 2004 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for preparing a large ZnSe single crystal, comprising vacuum sealing polycrystalline ZnSe prepared by a chemical vapor deposition in a capable and hot isostatically pressing polycrystalline ZnSe in the capsule, by which the ZnSe single crystal having such high qualities as to be used as a substrate on which an epitaxial layer of ZnSe can be grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.