Formation process of amorphous silicon film
US4585671A · kind A · utility
78Cited by
6References
7Claims
0Family size
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Key dates
| Filing date | Jul 6, 1984 |
| Grant date | Apr 29, 1986 |
| Priority date | — |
| Expiry date | Jul 6, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A formation process of an amorphous silicon film, which process comprises subjecting a higher silane containing at least two silicon atoms to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.