Sintered aluminum nitride semi-conductor device
US4585706A · kind A · utility
15Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1985 |
| Grant date | Apr 29, 1986 |
| Priority date | — |
| Expiry date | Aug 26, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.