Internally regulated power voltage circuit for MIS semiconductor integrated circuit
US4585955A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 1983 |
| Grant date | Apr 29, 1986 |
| Priority date | — |
| Expiry date | Nov 30, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/213
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A MIS semiconductor integrated circuit is one which contains an internal circuit. In the internal circuit, an externally supplied power source voltage supplied to a power source voltage terminal is supplied to the voltage input terminal of a voltage dropping circuit. The voltage at a voltage output terminal of the voltage dropping circuit is detected by a voltage detecting circuit containing an inverting circuit with a predetermined threshold voltage. The voltage dropping circuit is switch-controlled by applying the detected voltage to the control terminal thereof. The voltage output terminal of the voltage dropping circuit provides an internal power source voltage which is formed by dropping the externally supplied power source voltage. An internal circuit containing MOSFETs with an effective channel length of 1 .mu.m or less is driven by the internal power source voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.