Photodetector with isolated avalanche region
US4586067A · kind A · utility
13Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 14, 1984 |
| Grant date | Apr 29, 1986 |
| Priority date | — |
| Expiry date | Sep 14, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2255
Abstract
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region and having a higher concentration zone and a surrounding peripheral zone and a second region overlying the first region. The high electric field in the avalanche region is then restricted to the higher conductivity central zone thereby reducing the electric field at the detector surfaces when a reverse-bias voltage sufficient to produce avalanche multiplication is applied to the detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.