Opto-electrical device made of silicon for detecting infrared light

US4586069A · kind A · utility

Assignee

• Messerschmitt-Boelkow-Blohm Gesellschaft mit beschraenkter Haftung · DE

Inventors

• Max Koniger · Pullach, DE
• Gerhard Muller · Grafing, DE

Key dates

• Filing date: Sep 6, 1983
• Grant date: Apr 29, 1986
• Expiry date: Sep 6, 2003

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/227

Abstract

An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p.sup.+ -silicon with a doping density in the range of 5.times.10.sup.18 to 5.times.10.sup.19 (atoms per cm.sup.3) and a thickness in the range of 50 to 200 Angstroms. On top of this layer (3) a metal layer (2) for example of platinum is deposited and partially alloyed into layer (3) to form PtSi. Such elements are arranged in arrays and may be combined with other detector elements having their sensitivity in other spectrum ranges, e.g., 3 to 5 microns and/or in the visible spectrum range.