Photosensitive device for infrared radiation
US4587426A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1984 |
| Grant date | May 6, 1986 |
| Priority date | — |
| Expiry date | Nov 9, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/779
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a device comprising N lines and M columns of infrared-sensitive photodiodes, the charges derived from the detectors of one column are integrated in a first series of capacitors. MOS transistors connect the first series of capacitors to a second series in order to produce a distribution of charges between these capacitors. MOS transistors mounted as emitter-followers read the level of charges within the second capacitors while integration of the charges takes place in the first capacitors of the detectors of the next column. The detectors and the remainder of the device are integrated on two different semiconductor substrates but the device as a whole is integrated in one cryostat having a single output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.