Patent · US Expired

Hall effect device with overlapping flux concentrators

US4587509A · kind A · utility

37Cited by
1References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 28, 1984
Grant dateMay 6, 1986
Priority date
Expiry dateJun 28, 2004

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01D2205/40

Abstract

A Hall effect device for responding to weak magnetic fields uses a small chip of gallium arsenide located between the overlapped ends of two flux concentrators. The spacing between the concentrators may be as small as 95 micrometers. The flux concentrator, which serve to enhance the device's sensitivity are made of amorphous magnetic material, i.e. a metallic glass, which has high permeability.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.