Hall effect device with overlapping flux concentrators
US4587509A · kind A · utility
37Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1984 |
| Grant date | May 6, 1986 |
| Priority date | — |
| Expiry date | Jun 28, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01D2205/40
Abstract
A Hall effect device for responding to weak magnetic fields uses a small chip of gallium arsenide located between the overlapped ends of two flux concentrators. The spacing between the concentrators may be as small as 95 micrometers. The flux concentrator, which serve to enhance the device's sensitivity are made of amorphous magnetic material, i.e. a metallic glass, which has high permeability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.