Avalanche photodetector
US4587544A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 1984 |
| Grant date | May 6, 1986 |
| Priority date | — |
| Expiry date | Sep 14, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region, a second region overlying the first region and having a central zone which is thinner than a peripheral zone and a third region overlying the second region. The high electric field required for avalanche multiplication is then restricted to the portion of the first region adjacent the central zone while the field at the periphery is less than that necessary for avalanche multiplication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.