Semiconductor memory device
US4587638A · kind A · utility
13Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1984 |
| Grant date | May 6, 1986 |
| Priority date | — |
| Expiry date | Jul 12, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/832
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In the semiconductor memory device according to the present invention, when there is a defective portion in the memory cells, those memory cells are replaced by redundant memory cells. When defective portions are discovered in the memory cells, the fuse elements corresponding to the memory cells having the defective portions are cut off. Voltages of the select lines connected to the memory cells having the defective portions are held at an L level by the resistors. Due to this, the memory cells having the defective portions are not selected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.