Method of making short channel IGFET
US4587709A · kind A · utility
7Cited by
13References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1983 |
| Grant date | May 13, 1986 |
| Priority date | — |
| Expiry date | Jun 6, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for defining small dimensions by forming a vertical step in an etchable material; edge depositing a masking material by angularly evaporating a metal; and etching away all of the first material not covered by the masking material; and device obtained by depositing source, drain, and gate defining material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.