Method of fabricating a semiconductor device
US4588472A · kind A · utility
14Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 26, 1984 |
| Grant date | May 13, 1986 |
| Priority date | — |
| Expiry date | Jan 26, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention relates to the method of forming a semiconductor device having a diaphragm. A highly doped semiconductor region is formed in the peripheral portion of the semiconductor substrate around the part in which the diaphragm is to be formed, and then that part is etched. Thereby, the diaphragm of a semiconductor pressure sensor can be formed very accurately to a desired shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.