Polysilane positive photoresist materials and methods for their use
US4588801A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 1984 |
| Grant date | May 13, 1986 |
| Priority date | — |
| Expiry date | Apr 5, 2004 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G77/60
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein PA1 X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein PA1 A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A and B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.