Two-dimensional semiconductor image sensor with regulated integration time
US4589024A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1982 |
| Grant date | May 13, 1986 |
| Priority date | — |
| Expiry date | Aug 19, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/7795
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A two-dimensional image sensor integrated on a semiconductor substrate has a plurality of sensor elements disposed in rows and columns. The sensors in each row and column are individually selected in succession via parallel outputs of a first vertical shift register for readout of the sensor elements. Regulation of the integration time during which charge carriers collect in the sensor elements due to incident light is achieved by selecting the sensor elements in each row a further n times via a second vertical shift register after each readout of the charges optically generated therein and within the time span during which the charges collected in the sensor elements of the next n rows are respectively transferred for readout into the column lines. The further n selections eliminate charges formed in the interim in the column lines so that the integration time of all sensor elements is variably shortened by the duration of readout of the n rows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.