Metal silicide channel stoppers for integrated circuits and method for making the same
US4589193A · kind A · utility
65Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1984 |
| Grant date | May 20, 1986 |
| Priority date | — |
| Expiry date | Jun 29, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is the use of metal silicide (e.g. Pt-Si) contacts in boron lightly doped P.sup.- type silicon between two contiguous but not adjacent N.sup.+ type regions instead of employing the usual P.sup.+ implanted or diffused channel stoppers. The invention finds a particularly interesting application in polyimide filled deep trench isolated integrated circuits. The trench sidewalls are coated with an insulating material which is removed from the trench bottom at the all contact etch step. The Pt-Si is formed at the bottom of the trenches at the same time that the device contacts are made.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.