Variable gap devices
US4590507A · kind A · utility
25Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1984 |
| Grant date | May 20, 1986 |
| Priority date | — |
| Expiry date | Jul 31, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N15/15
Abstract
A device having a selectively doped varying bandgap region with pyroelectric characteristics is described which is useful as a photodetector or temperature sensor. A plurality of selectively doped regions forming a superlattice may also be used. Ferroelectric devices are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.