Method of fabricating low noise reference diodes and transistors
US4590664A · kind A · utility
30Cited by
11References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1983 |
| Grant date | May 27, 1986 |
| Priority date | — |
| Expiry date | Jul 29, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
The thick oxide over the surface portion of a P/N junction of a reference diode is removed, a thin oxide is grown thereon, and a contaminated shield layer is formed on the thin oxide. In addition to improving the reversed biased diode, the same method improves the forward biased emitter-base surface junction of a vertical bipolar transistor. The shield layer may be biased separate from the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.