Liquid phase growth of crystalline polyphosphide
US4591408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1983 |
| Grant date | May 27, 1986 |
| Priority date | — |
| Expiry date | Jun 29, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/462
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Polycrystalline and monocrystalline potassium polyphosphide, KP.sub.15, has been grown from the liquid phase at a temperature range of 600.degree.-700.degree. C. Massive crystallization of KP.sub.15 whiskers and platelets is observed. Crystalline KP.sub.15 films have been grown on gallium arsenide (110) and gallium phosphide (111) polished wafers, silicon (110) polished wafers, quartz, on a nickel evaporated 2000 angstrom nickel layer on quartz, and on nickel foil. Microcrystalline KP.sub.15 formed by a condensed phase process is incorporated into a sealed ampule evacuate 10.sup.-4 torr. The temperature is raised to 655.degree. C. and the furnace tilted to bring the melt in contact with the substrates. The temperature is then reduced to 640.degree. C. and the furnace is tilted back to the original position. Large KP.sub.15 whiskers several millimeters in size are grown from the melt and crystalline films of KP.sub.15 are grown topotaxially on gallium arsenide and gallium phosphide. Crystalline platelets of KP.sub.15 3.times.3 mm have been obtained by cleaving the grown film from a gallium phosphide substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.