Lead materials for semiconductor devices
US4591484A · kind A · utility
4Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1985 |
| Grant date | May 27, 1986 |
| Priority date | — |
| Expiry date | Apr 3, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lead material for semiconductor devices comprising from 0.4 to 4.0 wt % of Ni, from 0.1 to 1.0 wt % of Si, from 0.05 to 1.0 wt % of Zn, from 0.01 to 1.0 wt % of Mn, from 0.001 to less than 0.01 wt % of Mg, from 0.001 to less than 0.01 wt % of Cr, up to 0.003 wt % of S, and the balance of Cu and inevitable impurities. The material may further comprise up to 5 ppm of hydrogen and up to 5 ppm of oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.