Combination of AlN-Y.sub.2 O.sub.3 heat conductive ceramic substrate and electronic component

US4591537A · kind A · utility

Assignee

• W. C. Heraeus GmbH · DE

Inventors

• Fritz Aldinger · Rodenbach, DE
• Richard Keilberth · Kleinheubach, DE
• Waltraud Werdecker · Hanau, DE

Key dates

• Filing date: Jun 5, 1985
• Grant date: May 27, 1986
• Expiry date: Jun 5, 2005

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S428/901
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

A heat conductive ceramic substrate for semiconductor circuits, comprising polycrystalline aluminum nitride of high density containing as an additive boron nitride or oxides of calcium, magnesium, aluminum, titanium, zirconium, chrome, silicon, and/or rare earth metals. The boron nitride additive concentration ranges between 0.1 and 3% by weight, preferably between 0.5 and 2% by weight. The oxide additive concentration ranges between 0.1 and 5% by weight. The substrate has a significantly higher thermal conductivity than aluminum oxide substrates and is more economincal to manufacture than beryllium oxide substrates.