Radiation hard MOS devices and methods for the manufacture thereof
US4591890A · kind A · utility
21Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1982 |
| Grant date | May 27, 1986 |
| Priority date | — |
| Expiry date | Dec 20, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Radiation hard, N-channel MOS devices comprising active regions surrounded by field oxide protected by an underlying region of heavily doped p-type material. The guard region is doped heavily enough to provide field inversion voltages in the range of 50 V to 60 V prior to irradiation. The guard region is separated from the source and drain regions to provide acceptably high breakdown voltages. The devices are produced with minor variations to well known, high density local oxidation of silicon-type processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.