Method of fabricating a CCD read only memory utilizing dual-level junction formation
US4592130A · kind A · utility
3Cited by
10References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 15, 1984 |
| Grant date | Jun 3, 1986 |
| Priority date | — |
| Expiry date | Nov 15, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/053
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocked electrode whereby the first implant or diffusion provides a fixed charge required for ROM operation and the charge and polarity of said second implant or diffusion provides a neutralizing effect on the surface potential under the clocked electrode and above the double implanted or double diffused region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.