Method of patterning thin film
US4592801A · kind A · utility
58Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1984 |
| Grant date | Jun 3, 1986 |
| Priority date | — |
| Expiry date | Aug 9, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3163
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of patterning a thin film by dry etching is disclosed in which, in order for a thin alumina film to have a predetermined pattern, the thin alumina film is selectively removed by carrying out the ion beam etching which uses a carbon fluoride gas, while using a photoresist film as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.