Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes
US4594264A · kind A · utility
23Cited by
7References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 20, 1984 |
| Grant date | Jun 10, 1986 |
| Priority date | — |
| Expiry date | Nov 20, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing GaAs on a substrate is disclosed, involving applying a thin liquid film of a gallium-arsenic complex solution to the substrate and evaporating arsenide complex. The gallium-arsenic complex is selected from the group of complexes having the formula X.sub.3 GaAsR.sub.3 where X is chlorine, bromine, iodine, phenyl, methyl or trifluoromethyl and R is by hydrogen, phenyl, benzyl, methyl or trifluoromethyl. The thin solid film is irradiated with ultraviolet light at a sufficient wavelength and of a sufficient intensity to photochemically convert the gallium-arsenic complex to GaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.