Method for selective deposition of tungsten on silicon
US4595608A · kind A · utility
18Cited by
4References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1984 |
| Grant date | Jun 17, 1986 |
| Priority date | — |
| Expiry date | Nov 9, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal is selectively chemically vapor deposited on a substrate through openings in a moisture adsorbing mask layer by maintaining moisture in the mask layer. Thick metal layers are formed by precharging the mask with moisture. Also a cleaned tube is prepared for selective deposition by operating the process with a bare substrate until the tube is coated. The selective deposition is then performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.