Distributed amplifier using dual-gate GaAs FET's
US4595881A · kind A · utility
21Cited by
2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 29, 1985 |
| Grant date | Jun 17, 1986 |
| Priority date | — |
| Expiry date | May 29, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/607
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A 2-18 gigahertz monolithic distributed amplifier using dual-gate gallium arsenide field effect transistors for maximum gain over the design bandwidth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.