Low temperature deposition of silicon oxides for device fabrication
US4597985A · kind A · utility
6Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1985 |
| Grant date | Jul 1, 1986 |
| Priority date | — |
| Expiry date | Apr 15, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.