Guidance system for low angle silicon ribbon growth
US4599132A · kind A · utility
12Cited by
5References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1985 |
| Grant date | Jul 8, 1986 |
| Priority date | — |
| Expiry date | Jan 18, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical position of the ribbon with respect to the ramp are isolated from the growth end of the ribbon by (1) growing the ribbon so that it is extremely thin, preferably less than 0.7 mm, (2) maintaining a large growth zone, preferably one whose length is at least 5.0 cm, and (3) spacing the ramp from the growth zone by at least 15 cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.