Insulated gate type field effect semiconductor device and a circuit employing the device
US4599576A · kind A · utility
33Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1978 |
| Grant date | Jul 8, 1986 |
| Priority date | — |
| Expiry date | Mar 1, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An insulated gate type field effect transistor for high power which has a low conductivity region surrounding a drain region and an offset gate region having a further lower conductivity adjoined thereto, wherein the length and impurity concentration are designed according to the electric characteristics of the transistor. A combination of P channel and N channel type transistors having substantially the same electric characteristics and an audio amplifying circuit using the combination are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.