Photoconductive member having light receiving layer of A-(Si-Ge) and N
US4600671A · kind A · utility
33Cited by
3References
166Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1984 |
| Grant date | Jul 15, 1986 |
| Priority date | — |
| Expiry date | Sep 7, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/15
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductive member comprises a substrate for the photoconductive member and a light receiving layer exhibiting photoconductivity provided on said substrate comprising an amorphous material containing silicon atoms and germanium atoms, the light receiving lager having a layer region (N) containing nitrogen atoms, and the layer region (N) having a region (X) in which the content C (N) of nitrogen atoms in the layer thickness direction smoothly and continuously increases toward the upper surface of the light receiving layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.