Enhanced mobility buried channel transistor structure
US4600932A · kind A · utility
11Cited by
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5Claims
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Key dates
| Filing date | Oct 12, 1984 |
| Grant date | Jul 15, 1986 |
| Priority date | — |
| Expiry date | Oct 12, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4755
Abstract
An enhanced mobility buried channel transistor structure in which the quasi-two-dimensional electron gas (2DEG) which forms the conducting channel in the structure is removed from the proximity of the heterointerface, and is placed in a region remote therefrom. A "tapered" layer of Al.sub.x Ga.sub.1-x As is provided, where x varies from maximum to minimum as the interface with an undoped layer of GaAs is approached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.