Semiconductor memory device
US4601020A · kind A · utility
30Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1983 |
| Grant date | Jul 15, 1986 |
| Priority date | — |
| Expiry date | Dec 28, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An EEPROM utilizing a tunneling electron for writing and/or erasing, has charge pump circuits for pumping charge onto selected column and row lines up to a high voltage. In each of the charge pump circuits, a transistor is provided for intercepting clock pulses applied to a capacitor in each of the charge pump circuits connected to unselected column and row lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.