Method of making junction field effect transistor
US4602419A · kind A · utility
10Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 1984 |
| Grant date | Jul 29, 1986 |
| Priority date | — |
| Expiry date | Jan 9, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
Abstract
A junction field effect transistor has a substrate forming a junction with a layer of semiconductor material which has a gate, a source and a drain therein. The thickness of the n-type layer underlying the source is substantially greater than that underlying the gate (for example the ratio of n-thickness below the gate to that below the source is 1 to 2.53) in order to reduce the parasitic resistance as compared to conventional JFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.