Microcrystalline semiconductor method and devices
US4604636A · kind A · utility
15Cited by
1References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 11, 1983 |
| Grant date | Aug 5, 1986 |
| Priority date | — |
| Expiry date | May 11, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/50
Abstract
The specification discloses a P-I-N device wherein a double heterojunction is provided by a body of intrinsic amorphous silicon sandwiched between two microcrystalline silicon layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.