Semiconductor device and method for manufacturing the same
US4604641A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 29, 1982 |
| Grant date | Aug 5, 1986 |
| Priority date | — |
| Expiry date | Nov 29, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a semiconductor device having a semiconductor substrate with an active region including a buried contact and a field region including a field insulation layer. The device also includes a first polysilicon layer formed in the active region and on the field insulation layer, and a second polysilicon layer a portion of which is formed on said first polysilicon layer and another portion of which is formed on an isolation film covering a portion of the first polysilicon layer. The portion of the second polysilicon layer which is located above the field insulation layer is doped with metal or has a surface covered with a metal film. The semiconductor devices of the present invention operate at a high speed and are made small due to the use of multi-layer wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.