Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings
US4606115A · kind A · utility
11Cited by
1References
4Claims
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Key dates
| Filing date | May 14, 1985 |
| Grant date | Aug 19, 1986 |
| Priority date | — |
| Expiry date | May 14, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
Abstract
A method of manufacturing optically sensitive semiconductor devices in which an anti-reflective coating is provided without the addition of mask or etch steps to the manufacturing process flow. A single layer of silicon nitride is patterned to provide an anti-reflective coating over the active area of the optically sensitive device and to form the dielectric of any capacitors also a part of the integrated circuit. An oxide passivation layer is used so that it may be opened over the active area without disturbing the anti-reflective coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.