Magnetic field sensor
US4607271A · kind A · utility
66Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1983 |
| Grant date | Aug 19, 1986 |
| Priority date | — |
| Expiry date | Nov 14, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/40
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The magnetic field sensor is composed of a semiconductor magnetic field sensor, for example a magnetotransistor, and at least one NiFe or NiCo film disposed upon its surface. This film functions as a zero-crossing switch utilizing its magnetic induction/magnetic field-reversal hysteresis properties. The film is deposited immediately above the field sensitive zone of the magnetic field sensor with its easy axis oriented perpendicularly to the direction of current flow of the sensor. The semiconductor magnetic field sensor detects the magnetic induction generated by the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.