Low temperature sintered ceramic capacitor with high DC breakdown voltage, and method of manufacture
US4607315A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1985 |
| Grant date | Aug 19, 1986 |
| Priority date | — |
| Expiry date | Dec 4, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/4682
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A monolithic ceramic capacitor having a higher DC breakdown voltage per unit thickness of the dielectric ceramic body than heretofore. The major ingredient of the ceramic is expressed as {(Ba.sub.1-x-y Ca.sub.x Sr.sub.y)O}.sub.k (Ti.sub.1-z Zr.sub.z)O.sub.2, where x, y, z and k are numerals in the ranges specified herein. To this major ingredient is added a minor proportion of a mixture of boric oxide and silicon dioxide in specified ranges of proportions. For the fabrication of capacitors having dielectric bodies of the above composition, the moldings of the mixture of the major ingredient and additives in the specified proportions are sintered to maturity in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere. The sintering temperature can be so low (1000.degree.-1200.degree. C.) that the moldings can be cosintered with base metal electrodes buried therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.