Semiconductor laser having a burying layer of a II-VI compound
US4607369A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1983 |
| Grant date | Aug 19, 1986 |
| Priority date | — |
| Expiry date | Mar 30, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32308
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes an oscillation layer comprising a first clad layer, an active layer and a second clad layer which are comprised of gallium aluminum arsenide and deposited, in this order, on a semiconductor substrate. A buried cap layer in a stripe geometry for narrowing a width of a current path is deposited on a second clad layer. A burying layer comprised of II-VI compound such as zinc selenide, zinc sulfide and the like is formed on the second clad layer other than the portion on which the cap layer is formed, so that the cap layer is buried. The buried layer is formed utilizing a low temperature deposition such as a molecular beam epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.