Maskless growth of patterned films
US4608117A · kind A · utility
34Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1982 |
| Grant date | Aug 26, 1986 |
| Priority date | — |
| Expiry date | Jul 19, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occurring primarily on the prenucleated portions of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.