Back-illuminated photodiode with a wide bandgap cap layer
US4608586A · kind A · utility
11Cited by
1References
11Claims
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Key dates
| Filing date | May 11, 1984 |
| Grant date | Aug 26, 1986 |
| Priority date | — |
| Expiry date | May 11, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/223
Abstract
In.sub.0.53 Ga.sub.0.47 As p-i-n photodiodes with room temperature dark currents as low as 0.1 nA at -10 V bias are realized by introducing a wide bandgap (e.g., quaternary InGaAsP) cap layer on the ternary InGaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.