Lead-europium selenide-telluride heterojunction semiconductor laser
US4608694A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 27, 1983 |
| Grant date | Aug 26, 1986 |
| Priority date | — |
| Expiry date | Dec 27, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3222
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A double heterojunction lead salt diode infrared laser having an active region layer of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region layer is sandwiched between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium-containing lead chalcogenide layers have an energy band gap greater than the active region layer and an index of refraction less than the active region layer. Hence, the laser has lattice matching, as well as enhanced carrier confinement and optical confinement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.