Plasma enhanced deposition of semiconductors
US4609424A · kind A · utility
3Cited by
8References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1985 |
| Grant date | Sep 2, 1986 |
| Priority date | — |
| Expiry date | Oct 28, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.