Photosensitive device for the infrared range
US4609824A · kind A · utility
132Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1984 |
| Grant date | Sep 2, 1986 |
| Priority date | — |
| Expiry date | Nov 9, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/779
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photosensitive device for the infrared range wherein each detector is connected to a first and a second MOS transistor. The second MOS transistors are addressed, column by column, by a first shift register. The first MOS transistors are connected, line by line, to a charge storage capacity and to a third charge reading MOS transistor addressed by a second shift register. The whole of the device is placed in a cryostat which only has a single output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.