Thin film transistor
US4609930A · kind A · utility
65Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 7, 1984 |
| Grant date | Sep 2, 1986 |
| Priority date | — |
| Expiry date | May 7, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6723
Abstract
A thin film transistor of amorphous silicon is supported by an insulated gate on an insulating substrate and has the opposite side covered with a shading layer of amorphous silicon containing germanium in an amount more than 30% atomic density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.