Patent · US Expired

Method of dicing a semiconductor wafer

US4610079A · kind A · utility

70Cited by
15References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 26, 1985
Grant dateSep 9, 1986
Priority date
Expiry dateFeb 26, 2005

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T225/12
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of dicing a semiconductor wafer in which a physical discontinuity is formed on the surface of the wafer on both sides of a dicing line to limit the spreading of cracks and chips generated during dicing. Thereafter, the semiconductor wafer is diced to separate the pellets.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.