Shallow impurity neutralization
US4610731A · kind A · utility
12Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1985 |
| Grant date | Sep 9, 1986 |
| Priority date | — |
| Expiry date | Apr 3, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is described for fabricating semiconductor devices in which atomic hydrogen is used to neutralize shallow donors in III-V semiconductor compounds so as to make certain areas exhibit high resistance. Also described is reverse neutralization in which heat is used to convert neutralized regions to regions with n-type conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.